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Recovered microbial community structure is known to be influenced by sample storage conditions and nucleic acid extraction methods, and the impact varies by sample type. Peat soils store a large portion of soil carbon and their microbiomes mediate climate feedbacks. Here, we tested three storage conditions and five extraction protocols on peat soils from three physicochemically distinct habitats in Stordalen Mire, Sweden, revealing significant methodological impacts on microbial (here, meaning bacteria and archaea) community structure. Initial preservation method impacted alpha but not beta diversity, with in-field storage in LifeGuard buffer yielding roughly two-thirds the richness of in-field flash-freezing or transport from the field on ice (all samples were stored at −80 °C after return from the field). Nucleic acid extraction method impacted both alpha and beta diversity; one method (the PowerSoil Total RNA Isolation kit with DNA Elution Accessory kit) diverged from the others (PowerMax Soil DNA Isolation kit-High Humic Acid Protocol, and three variations of a modifiedPowerMax Soil DNA/RNA isolation kit), capturing more diverse microbial taxa, with divergent community structures. Although habitat and sample depth still consistently dominated community variation, method-based biases in microbiome recovery for these climatologically-relevant soils are significant, and underscore the importance of methodological consistency for accurate inter-study comparisons, long-term monitoring, and consistent ecological interpretations. 

ScAlMgO4 (SAM) is a promising substrate material for group III-nitride semiconductors. SAM has a lower lattice mismatch with III-nitride materials compared to conventionally used sapphire (Al2O3) and silicon substrates. Bulk SAM substrate has the issues of high cost and lack of large area substrates. Utilizing solid-phase epitaxy to transform an amorphous SAM on a sapphire substrate into a crystalline form is a cost-efficient and scalable approach. Amorphous SAM layers were deposited on 0001-oriented Al2O3 by sputtering and crystallized by annealing at a temperature greater than 850 °C. Annealing under suboptimal annealing conditions results in a larger volume fraction of a competing spinel phase (MgAl2O4) exhibiting themselves as crystal facets on the subsequently grown InGaN layers during MOCVD growth. InGaN on SAM layers demonstrated both a higher intensity and emission redshift compared to the co-loaded InGaN on GaN on sapphire samples, providing a promising prospect for achieving efficient longer-wavelength emitters. 

Abstract In situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO₃(g) and IrO₂(g) at high temperatures and highP_O2. To address this challenge, we combine thermodynamic analysis of the Pr-Ir-O₂system with experimental results from the conventional physical vapor deposition (PVD) technique of co-sputtering. Our results indicate that only high growth temperatures yield films with crystallinity sufficient for utilizing and tailoring the desired topological electronic properties and the in situ synthesis of Pr₂Ir₂O₇thin films is fettered by the inability to grow withP_O2on the order of 10 Torr at high temperatures, a limitation inherent to the PVD process. Thus, we suggest techniques capable of supplying high partial pressure of key species during deposition, in particular chemical vapor deposition (CVD), as a route to synthesis of Pr₂Ir₂O₇.